WNMD2160 mosfet equivalent, dual n-channel mosfet.
SOT-23-6L
G1 D1/D2 G2 654
1 23 S1 D1/D2 S2
Pin configuration (Top view)
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC cu.
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
6 54
21.
The WNMD2160 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit..
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